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1 MRF1507 MRF1507t1 motorola rf device data the rf mosfet line nchannel enhancementmode lateral mosfets the MRF1507 is designed for broadband commercial and industrial applications at frequencies to 520 mhz. the high gain and broadband performance of this device makes it ideal for largesignal, common source amplifier applications in 7.5 volt portable fm equipment. ? specified performance @ 520 mhz, 7.5 volts output power e 8 watts power gain e 10 db efficiency e 65% ? characterized with series equivalent largesignal impedance parameters ? excellent thermal stability ? capable of handling 20:1 vswr, @ 9.5 vdc, 520 mhz, 2 db overdrive ? broadband uhf/vhf demonstration amplifier information available upon request ? rf power plastic surface mount package ? available in tape and reel by adding t1 suffix to part number. t1 suffix = 1,000 units per 12 mm, 7 inch reel. maximum ratings rating symbol value unit drainsource voltage (1) v dss 25 vdc gatesource voltage v gs 20 vdc drain current e continuous i d 4 adc total device dissipation @ t c = 25 c derate above 25 c p d 62.5 0.50 watts w/ c storage temperature range t stg 65 to +150 c operating junction temperature t j 150 c thermal characteristics characteristic symbol max unit thermal resistance, junction to case r q jc 2 c/w (1) not designed for 12.5 volt applications. note caution mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. order this document by MRF1507/d
semiconductor technical data

8 w, 520 mhz, 7.5 v lateral nchannel broadband rf power mosfet case 46602, style 1 (pld 1.5) ? motorola, inc. 1998 g d s rev 1
MRF1507 MRF1507t1 2 motorola rf device data electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain current (v ds = 25 vdc, v gs = 0) i dss e e 1 m adc gatesource leakage current (v gs = 20 vdc, v ds = 0) i gss e e 1 m adc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 100 m adc) v gs(th) 2.5 3.4 e vdc drainsource onvoltage (v gs = 10 vdc, i d = 2 adc) v ds(on) 0.3 0.44 e vdc forward transconductance (v ds = 10 vdc, i d = 2 adc) g fs 1.30 1.80 e s dynamic characteristics input capacitance (v ds = 7.5 vdc, v gs = 0, f = 1 mhz) c iss e 48 e pf output capacitance (v ds = 7.5 vdc, v gs = 0, f = 1 mhz) c oss e 40.5 e pf reverse transfer capacitance (v ds = 7.5 vdc, v gs = 0, f = 1 mhz) c rss e 5.2 e pf functional tests (in motorola test fixture) commonsource amplifier power gain (v dd = 7.5 vdc, p in = 29 dbm, i dq = 150 ma, f = 520 mhz) g ps 10 11 e db drain efficiency (v dd = 7.5 vdc, p in = 29 dbm, i dq = 150 ma, f = 520 mhz) h 50 65 e % p out (v dd = 7.5 vdc, p in = 29 dbm, i dq = 150 ma, f = 520 mhz) p out 8 9.9 e w
3 MRF1507 MRF1507t1 motorola rf device data figure 1. 500 520 mhz broadband test circuit b1 fair rite products long ferrite bead c1, c5 0.1 m f, 100 mil chip capacitor c2, c4 10 m f, 50 v electrolytic capacitor c3, c6, c8, c14 130 pf, 100 mil chip capacitor c7, c9, c13 0.320 pf trimmer capacitor c10 82 pf, 100 mil chip capacitor c11 39 pf, 100 mil chip capacitor c12 32 pf, 100 mil chip capacitor l1 4 turns, #20 awg enamel, 0.1 id n1, n2 type n connectors r1 1.1 m w , 1/4 w carbon r2 2 k w , 1/2 w carbon r3 100 w , 1/4 w carbon v gg v dd c1 r1 r2 c2 c3 c5 c4 + r3 rf input rf output z1 z2 z3 z4 z7 c8 c7 c14 c9 dut c12 z8 c13 z10 z11 r4 c10 z5 z6 c11 l1 z9 n2 + c6 b1 n1 r4 20 w , 1/4 w carbon z1 0.459 x 0.083 microstrip z2 0.135 x 0.083 microstrip z3 1.104 x 0.083 microstrip z4 0.114 x 0.083 microstrip z5 0.154 x 0.083 microstrip z6 0.259 x 0.213 microstrip z7 0.217 x 0.213 microstrip z8 0.175 x 0.083 microstrip z9 0.747 x 0.083 microstrip z10 0.608 x 0.083 microstrip z11 0.594 x 0.083 microstrip board glass teflon, 31 mils typical characteristics figure 2. output power versus input power 9 p in , input power (watts) 1 0.90 5 figure 3. output power versus supply voltage @ 400 mhz 4 7 v dd , supply voltage (v) 12 8 5 0.50 1.31 10 p out , output power (watts) 610 0.10 p out , output power (watts) 7 8 v dd = 7.5 v i dq = 200 ma 11 6 9 p in = 300 mw 3 0.71 0.30 1.10 1.51 11 9 8 4 6 10 2 400 mhz 470 mhz 440 mhz 7 500 mw 700 mw i dq = 200 ma
MRF1507 MRF1507t1 4 motorola rf device data typical characteristics p out gain (db), (watts) p out gain (db), figure 4. output power versus supply voltage @ 470 mhz 12 v dd , supply voltage (v) 5 4 8 8 10 figure 5. output power versus supply voltage @ 440 mhz v dd , supply voltage (v) 79 p out , output power (watts) 6 p out , output power (watts) 11 figure 6. output power versus gate current 9 i dq , gate current (ma) 6 figure 7. gain, p out , efficiency versus drain voltage 16 v dd , drain voltage (v) 4 450 figure 8. p out versus i dq 0 i dq (a) 8 0.7 figure 9. p out , gain, drain efficiency versus p in input power (dbm) 0 23 0.3 15 0 5 10 12 0 67 4 10 12 30 40 drain efficiency (%) 13 8910 15 20 50 60 70 80 6.5 7 7.5 8 f = 520 mhz i dq = 150 ma p in = 0.7 w f = 440 mhz 200 6 9 8.5 5 8 10 p in = 300 mw 500 mw 700 mw 7 12 5 4 8 8 10 79 6 11 13 6 9 10 7 p in = 300 mw 500 mw 700 mw p out , output power (watts) 50 100 150 250 500 300 350 400 v cc = 7.5 v p in = 0.6 w f = 400 mhz f = 470 mhz (watts) drain efficiency gain p out p out , output power (watts) 0.1 0.8 0.4 0.5 0.2 0.6 0.9 1.0 p out gain f = 520 mhz v dd = 7.5 v p in = 0.7 w 20 30 drain efficiency (%) 40 50 60 70 17 19 21 27 25 29 f = 520 mhz v dd = 7.5 v i dq = 150 ma p out p out gain drain efficiency i dq = 200 ma i dq = 200 ma g p (db),
5 MRF1507 MRF1507t1 motorola rf device data typical characteristics figure 10. p out versus drain voltage 12 v ds , drain voltage (v) 0 8 4 8 figure 11. p out versus i dq i dq , (ma) 6 p out , output power (watts) 4 p out , output power (watts) 10 figure 12. p out versus drain voltage 12 v ds , drain voltage (v) 0 figure 13. p out versus i dq 10 i dq , (ma) 4 figure 14. p out versus p in 20 p in , (dbm) 5 figure 15. p out versus p in p in , (dbm) 5 23 20 4 9 13 8 0 400 600 0 9 12 800 900 1000 17 12 2 4 6 8 8 6 10 200 6 10 p in = 250 mw 500 mw 700 mw 2 12 4 0 400 8 10 200 700 0 6 1000 p in = 250 mw 500 mw 700 mw p out , output power (watts) 567 910 24 22 21 23 25 v dd = 7.5 v 21 22 24 25 79 5 f = 500 mhz v dd = 7.5 v f = 500 mhz v dd = 7.5 v 2 500 300 800 100 600 900 p in = 250 mw 500 mw 700 mw f = 520 mhz v dd = 7.5 v p out , output power (watts) 2 500 700 100 300 f = 520 mhz v dd = 7.5 v p in = 250 mw 500 mw 700 mw f = 135 mhz i dq = 800 ma p out , output power (watts) 11 10 8 7 6 p out , output power (watts) v dd = 7.5 v v dd = 9 v v dd = 9 v f = 155 mhz i dq = 800 ma 7 11 15
MRF1507 MRF1507t1 6 motorola rf device data typical characteristics i d , drain current (amps) v gs , gatesource voltage (v) 1 0 2 4 v ds , drainsource voltage (v) 14 i d , drain current (amps) 0 c, capacitance (pf) 5 v ds , drainsource voltage (v) 0 0 1 2 3 t c = 25 c 2 4 6 v ds = 10 v 3 60 0 10 20 515 0 40 80 20 c iss 10 100 35 typical device shown c oss c rss v gs = 0 v f = 1 mhz p in , (dbm) 5 23 20 9 13 17 21 22 24 25 p out , output power (watts) v dd = 7.5 v v dd = 9 v f = 175 mhz i dq = 800 ma 7 11 15 figure 16. p out versus p in figure 17. drain current versus gate voltage (typical device shown) figure 18. capacitance versus voltage figure 19. maximum rated forward biased safe operating area
7 MRF1507 MRF1507t1 motorola rf device data z ol * f mhz z in w z ol * w 400 440 470 500 3.6 j3.1 3.1 j4.4 4.0 j3.7 2.0 j2.71 2.5 j0.5 2.7 j0.6 2.5 j1.2 2.05 j0.65 z in = conjugate of source impedance with parallel 20 w resistor and 82 pf capacitor in series with gate. z ol * = conjugate of the load impedance at given output power, voltage, frequency, and h d > 50 %. v dd = 7.5 v, i dq = 150 ma, p out = 8 w 520 1.9 j3.5 2.1 j0.4 z o = 10 w f mhz z in w z ol * w 135 155 175 6.2 j15.1 5.33 j17.0 8.29 j16.9 2.3 j1.8 2.5 j0.8 2.6 j0.6 z in = conjugate of source impedance with parallel 10 w resistor and 1000 pf capacitor in series with gate. z ol * = conjugate of the load impedance at given output power, voltage, frequency, and h d > 50 %. v dd = 7.5 v, i dq = 800 ma, p out = 8 w f = 400 mhz note: z ol * was chosen based on tradeoffs between gain, drain efficiency, and device stability. z in z ol * f = 400 mhz 520 520 175 z in f = 135 mhz 175 f = 135 mhz
MRF1507 MRF1507t1 8 motorola rf device data table 1. common source scattering parameters (v ds = 7.5 vdc) i d = 150 ma f s 11 s 21 s 12 s 22 f mhz |s 11 | f |s 21 | f |s 12 | f |s 22 | f 50 0.76 138 15.18 100 0.04 12 0.71 141 100 0.77 155 7.68 84 0.04 3 0.72 156 200 0.81 162 3.53 65 0.03 18 0.78 162 300 0.85 165 2.08 53 0.03 27 0.83 164 400 0.89 167 1.37 44 0.03 33 0.87 166 500 0.91 169 0.96 37 0.02 36 0.90 168 700 0.95 171 0.54 27 0.01 35 0.94 170 850 0.96 173 0.38 22 0.01 30 0.95 172 1000 0.97 174 0.29 19 0.01 19 0.96 173 1200 0.98 175 0.20 16 0.01 3 0.97 174 i d = 800 ma f s 11 s 21 s 12 s 22 f mhz |s 11 | f |s 21 | f |s 12 | f |s 22 | f 50 0.82 152 16.58 98 0.03 9 0.79 161 100 0.81 165 8.37 88 0.03 1 0.80 169 200 0.82 170 4.08 76 0.02 8 0.81 172 300 0.84 172 2.60 68 0.02 13 0.83 173 400 0.85 172 1.84 61 0.02 17 0.84 173 500 0.87 172 1.38 54 0.02 20 0.86 173 700 0.90 173 0.86 44 0.02 21 0.89 174 850 0.91 174 0.64 38 0.01 19 0.90 174 1000 0.92 175 0.49 33 0.01 12 0.92 175 1200 0.94 176 0.36 29 0.01 2 0.93 176 i d = 1.5 a f s 11 s 21 s 12 s 22 f mhz |s 11 | f |s 21 | f |s 12 | f |s 22 | f 50 0.83 156 16.45 97 0.02 9 0.80 164 100 0.83 167 8.29 88 0.02 1 0.81 171 200 0.83 172 4.06 77 0.02 6 0.82 174 300 0.84 173 2.61 70 0.02 10 0.83 174 400 0.86 173 1.86 63 0.02 13 0.85 174 500 0.87 174 1.41 57 0.02 15 0.86 174 700 0.89 174 0.89 47 0.01 16 0.88 175 850 0.91 175 0.67 41 0.01 13 0.90 175 1000 0.92 175 0.52 36 0.01 6 0.91 175 1200 0.93 176 0.38 31 0.01 8 0.92 176
9 MRF1507 MRF1507t1 motorola rf device data applications information design considerations the MRF1507 is a commonsource, rf power, nchannel enhancement mode, lateral m etalo xide s emiconductor f ielde ffect t ransistor (mosfet). motorola application note an211a, afets in theory and practiceo, is suggested reading for those not familiar with the construction and characteristics of fets. this surface mount packaged device was designed primari- ly for vhf and uhf portable power amplifier applications. manufacturability is improved by utilizing the tape and reel capability for fully automated pick and placement of parts. however, care should be taken in the design process to insure proper heat sinking of the device. the major advantages of lateral rf power mosfets include high gain, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mismatched loads without suffering damage. mosfet capacitances the physical structure of a mosfet results in capacitors between all three terminals. the metal oxide gate structure determines the capacitors from gatetodrain (c gd ), and gatetosource (c gs ). the pn junction formed during fabrica- tion of the rf mosfet results in a junction capacitance from draintosource (c ds ). these capacitances are characterized as input (c iss ), output (c oss ) and reverse transfer (c rss ) capacitances on data sheets. the relationships between the interterminal capacitances and those given on data sheets are shown below. the c iss can be specified in two ways: 1. drain shorted to source and positive voltage at the gate. 2. positive voltage of the drain in respect to source and zero volts at the gate. in the latter case, the numbers are lower. however, neither method represents the actual operating conditions in rf applications. drain characteristics one critical figure of merit for a fet is its static resistance in the fullon condition. this onresistance, r ds(on) , occurs in the linear region of the output characteristic and is specified at a specific gatesource voltage and drain current. the drainsource voltage under these conditions is termed v ds(on) . for mosfets, v ds(on) has a positive temperature coefficient at high temperatures because it contributes to the power dissipation within the device. bv dss values for this device are higher than normally required for typical applications. measurement of bv dss is not recommended and may result in possible damage to the device. gate characteristics the gate of the rf mosfet is a polysilicon material, and is electrically isolated from the source by a layer of oxide. the dc input resistance is very high on the order of 10 9 w e resulting in a leakage current of a few nanoamperes. gate control is achieved by applying a positive voltage to the gate greater than the gatetosource threshold voltage, v gs(th) . gate voltage rating e never exceed the gate voltage rating. exceeding the rated v gs can result in permanent damage to the oxide layer in the gate region. gate termination e the gates of these devices are essentially capacitors. circuits that leave the gate opencir- cuited or floating should be avoided. these conditions can result in turnon of the devices due to voltage buildup on the input capacitor due to leakage currents or pickup. gate protection e these devices do not have an internal monolithic zener diode from gatetosource. if gate protection is required, an external zener diode is recommended. using a resistor to keep the gatetosource impedance low also helps dampen transients and serves another important function. voltage transients on the drain can be coupled to the gate through the parasitic gatedrain capacitance. if the gatetosource impedance and the rate of voltage change on the drain are both high, then the signal coupled to the gate may be large enough to exceed the gatethreshold voltage and turn the device on.
MRF1507 MRF1507t1 10 motorola rf device data dc bias since the MRF1507 is an enhancement mode fet, drain current flows only when the gate is at a higher potential than the source. rf power fets operate optimally with a quiescent drain current (i dq ), whose value is application dependent. the MRF1507 was characterized at i dq = 150 ma, which is the suggested value of bias current for typical applications. for special applications such as linear amplification, i dq may have to be selected to optimize the critical parameters. the gate is a dc open circuit and draws no current. therefore, the gate bias circuit may generally be just a simple resistive divider network. some special applications may require a more elaborate bias system. gain control power output of the MRF1507 may be controlled to some degree with a low power dc control signal applied to the gate, thus facilitating applications such as manual gain control, alc/agc and modulation systems. this characteristic is very dependent on frequency and load line. mounting the specified maximum thermal resistance of 2 c/w assumes a majority of the 0.065 x 0.180 source contact on the back side of the package is in good contact with an appropriate heat sink. as with all rf power devices, the goal of the thermal design should be to minimize the temperature at the back side of the package. amplifier design impedance matching networks similar to those used with bipolar transistors are suitable for the MRF1507. for exam- ples see motorola application note an721, aimpedance matching networks applied to rf power transistors.o large signal impedances are provided, and will yield a good first pass approximation. since rf power mosfets are triode devices, they are not unilateral. this coupled with the very high gain of the MRF1507 yields a device capable of self oscillation. stability may be achieved by techniques such as drain loading, input shunt resistive loading, or output to input feedback. the rf test fixture implements a parallel resistor and capacitor in series with the gate, and has a load line selected for a higher efficiency, lower gain, and more stable operating region. twoport stability analysis with the MRF1507 sparameters provides a useful tool for selection of loading or feedback circuitry to assure stable operation. see motorola application note an215a, arf smallsignal design using twoport parameterso for a discussion of two port network theory and stability.
11 MRF1507 MRF1507t1 motorola rf device data package dimensions case 46602 issue b (pld 1.5) notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch 3. resin bleed/flash allowable in zone v, w, and x. dim min max min max millimeters inches a 0.255 0.265 6.48 6.73 b 0.225 0.235 5.72 5.97 c 0.065 0.072 1.65 1.83 d 0.130 0.150 3.30 3.81 e 0.021 0.026 0.53 0.66 f 0.026 0.044 0.66 1.12 g 0.050 0.070 1.27 1.78 h 0.045 0.063 1.14 1.60 k 0.273 0.285 6.93 7.24 l 0.245 0.255 6.22 6.48 n 0.230 0.240 5.84 6.10 p 0.000 0.008 0.00 0.20 q 0.055 0.063 1.40 1.60 r 0.200 0.210 5.08 5.33 s 0.006 0.012 0.15 0.31 u 0.006 0.012 0.15 0.31 zone v 0.000 0.021 0.00 0.53 zone w 0.000 0.010 0.00 0.25 zone x 0.000 0.010 0.00 0.25 style 1: pin 1. drain 2. gate 3. source 4. source 2 3 4 1 af r l n k d b q e p c g h zone x zone w 0.89 (0.035) x 45 5 10 draft zone v s u resin bleed/flash allowable j 0.160 0.180 4.06 4.57 j
MRF1507 MRF1507t1 12 motorola rf device data motorola reserves the right to make changes without further notice to any products herein. motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. atypicalo parameters which may be provided in motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. motorola does not convey any license under its patent rights nor the rights of others. motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the motorola product could create a situation where personal injury or death may occur. should buyer purchase or use motorola products for any such unintended or unauthorized application, buyer shall indemnify and hold motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that motorola was negligent regarding the design or manufacture of the part. motorola and are registered trademarks of motorola, inc. motorola, inc. is an equal opportunity/affirmative action employer. mfax is a trademark of motorola, inc. how to reach us: usa / europe / locations not listed : motorola literature distribution; japan : nippon motorola ltd.: spd, strategic planning office, 141, p.o. box 5405, denver, colorado 80217. 13036752140 or 18004412447 4321 nishigotanda, shagawaku, tokyo, japan. 0354878488 customer focus center: 18005216274 mfax ? : rmfax0@email.sps.mot.com touchtone 1 6022446609 asia / pacific : motorola semiconductors h.k. ltd.; 8b tai ping industrial park, motorola fax back system us & canada only 18007741848 51 ting kok road, tai po, n.t., hong kong. 85226629298 http://sps.motorola.com/mfax/ home page : http://motorola.com/sps/ ? MRF1507/d

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